In this paper we report abnormal non-ohmic behaviour observed in Si \(\delta\)-doped GaAs. We have performed measurements in Hall bar and Van der Pauw geometries in which electron transport phenomena can be studied by looking into the dependence of the device resistance \(\boldsymbol{R}_{x x}\) on t
Phase coherence of the electrons in δ-doped gaAs
✍ Scribed by M. Asche; K.J. Friedland; P. Kleinert; H. Kostial; J. Herzog; R. Hey
- Book ID
- 103918867
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 374 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0749-6036
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