We have theoretically investigated the subband structure of single Si δ-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the δ-doping concentration, the δ-layer thickness and diffusion of donor impurities. The spread of the impurities are taken into account in two
✦ LIBER ✦
Electronic structure of Fibonacci Si δ-doped GaAs
✍ Scribed by F. Domínguez-Adame; E. Maciá; B. Méndez
- Book ID
- 107987003
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 469 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0375-9601
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