Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure
โ Scribed by Li, J. Z.; Lin, J. Y.; Jiang, H. X.; Asif Khan, M.; Chen, Q.
- Book ID
- 121692790
- Publisher
- American Institute of Physics
- Year
- 1997
- Tongue
- English
- Weight
- 310 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.365893
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
AlGaN=GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN=GaN heterostructures have recently been discussed. In this paper, we have studi
## Abstract Transport properties of the twoโdimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecularโbeam epitaxy are experimentally investigated. Conventional Hall and Shubnikovโde Haas measurements as well as investigations of quantum transport phenomena are reported. It