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Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

✍ Scribed by Sunwoo Lee; Changhwan Choi; Kilbock Lee; Joong Hwee Cho; Ki-Young Ko; Jinho Ahn


Book ID
118501892
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
692 KB
Volume
521
Category
Article
ISSN
0040-6090

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Stability of pentacene organic field eff
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This paper reports on the processing and the characterization of pentacene organic field effect transistors (OFETs) with a two-layer gate dielectric consisting of a polymer (PMMA) on a high-k oxide (Ta 2 O 5 ). This dielectric stack has been designed in view to combine low voltage operating devices,