We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small sign
β¦ LIBER β¦
Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues
β Scribed by Lee, Chwan Ying; Chen, Yung Hsiang; Lee, Lurng Shehng; Hung, Chien Chung; Yen, Cheng Tyng; Lin, Suh Fang; Xuan, Rong; Kuo, Wei Hung; Ku, Tzu Kun; Tsai, Ming Jinn
- Book ID
- 120457778
- Publisher
- Trans Tech Publications, Ltd.
- Year
- 2012
- Tongue
- English
- Weight
- 555 KB
- Volume
- 717-720
- Category
- Article
- ISSN
- 1662-9752
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