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Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

✍ Scribed by J.G. Cederberg; K.E. Waldrip; G.M. Peake

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Band offsets in In0.15Ga0.85As/ GaAs and

✍ E.M. Goldys; H.Y. Zuo; T.L. Tansley; M.R. Phillips; C.M. Contessa 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 67 KB

Type I and Type II Alignment of the Ligh

✍ E. M. Goldys; H. Y. Zuo; M. R. Phillips; CM. Contessa; M. R. Vaughan; T. L. Tans 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 548 KB

Optical properties of strained layer (11

✍ T. S. Moise; L. J. Guido; J. C. Beggy; T. J. Cunningham; S. Seshadri; R. C. Bark 📂 Article 📅 1992 🏛 Springer US 🌐 English ⚖ 616 KB

An In0.15Ga0.85As/GaAs pseudomorphic sin

✍ Rosenberg, J.J.; Benlamri, M.; Kirchner, P.D.; Woodall, J.M.; Pettit, G.D. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 383 KB

Determination of the subband carrier den

✍ T.W. Kim; M. Jung; D.U. Lee 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Electronic subband studies of a strained

✍ T.W. Kim; M. Jung; T.H. Park; K.H. Yoo 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 476 KB