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Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures

✍ Scribed by T. S. Moise; L. J. Guido; J. C. Beggy; T. J. Cunningham; S. Seshadri; R. C. Barker

Book ID: 112822245
Publisher: Springer US
Year: 1992
Tongue: English
Weight: 616 KB
Volume: 21
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02670931

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Pseudomorphic In 0.04 Ga 0.96 As/Al 0.3 Ga 0.7 As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A In 0.04 Ga 0.96 As ternary substrates by MBE at growth temperature of T s = 520 • C. The interface flatness of the QWs was characterized by photolumin