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Enhanced excitonic transitions in strained InxGa1−xAs/Al0.15Ga0.85As quantum well heterostructures

✍ Scribed by Kenzo Fujiwara; Kenji Kawashima; Kikuo Kobayashi; Sano Naokatsu

Book ID
118365523
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
497 KB
Volume
267
Category
Article
ISSN
0039-6028

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Low temperature photoluminescence measurements were carried out on pseudomorphlcally strained In \(\mathrm{Ga}_{1-\mathrm{A}} \mathrm{As}-\mathrm{Al} \mathrm{O}_{0.28} \mathrm{Ga}_{0.72} \mathrm{As}\) ternary-on-ternary heterostructures grown by molecular beam epitaxy to investigate the change in th