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Pendeo-epitaxial growth of gallium nitride on silicon substrates

✍ Scribed by Thomas Gehrke; Kevin J. Linthicum; Edward Preble; Pradeep Rajagopal; Carsten Ronning; Christian Zorman; Mehran Mehregany; Robert F. Davis

Publisher
Springer US
Year
2000
Tongue
English
Weight
214 KB
Volume
29
Category
Article
ISSN
0361-5235

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✍ Dr. L. D. Pramatarova; Dr. D. N. Tretjakov πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 347 KB πŸ‘ 2 views

## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e