๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Passively Q-switched Nd:LuVO4 laser using Cr4+:YAG as saturable absorber

โœ Scribed by F.Q. Liu; H.R. Xia; S.D. Pan; W.L. Gao; D.G. Ran; S.Q. Sun; Z.C. Ling; H.J. Zhang; S.R. Zhao; J.Y. Wang


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
388 KB
Volume
39
Category
Article
ISSN
0030-3992

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Diode-pumped doubly passively Q-switched
โœ K. Cheng; S.Z. Zhao; Y.F. Li; G.Q. Li; D.C. Li; K.J. Yang; J. An; G. Zhang; H.B. ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 100 KB

A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr 4+ :YAG saturable absorber and GaAs output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with pure GaAs. By using two Cr 4+ :YAG saturable absorbers with different small-signal t

Passively Q-switched mode-locked Nd3+:Lu
โœ M. Li; S. Zhao; Y. Li; K. Yang; G. Li; D. Li; J. An; T. Li; Z. Yu ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 90 KB

By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the

Laser-diode pumped passively Q-switched
โœ Shengzhi Zhao; Lei Chen; Hongming Zhao; Guiqiu Li; Lu Zhang; Zhenxiang Chen; Hua ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 306 KB

A laser-diode pumped passively Q-switched new type crystal Nd 3+ :NaY(WO 4 ) 2 (known as Nd:NYW) laser with Cr 4+ :YAG saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different small-signal transmission of Cr

Passively Q-switched Nd:GdVO4 laser with
โœ Lei Pan; Xueyuan Hou; Yufei Li; Yuming Sun ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 207 KB

A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is