A passively mode-locked diode end-pumped YVO~4~/Nd:YVO~4~ composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and contin
Passively mode-locked YVO4/Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror
โ Scribed by T. Li; S.Z. Zhao; Z. Zhuo; Y.G. Wang; G.Q. Li
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 121 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1612-2011
No coin nor oath required. For personal study only.
โฆ Synopsis
A diode-pumped passively mode-locked YVO 4 / Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror (SESAM) and a intracavity frequencydoubling KTP crystal was realized. The maximum average output power of 2.06 W at 532 nm with a repetition rate of 100 MHz was obtained at a pump power of 15 W, corresponding to optical slop efficiency 17.2%. The 532 nm mode-locked pulse width was estimated to be approximately 18-ps.
Intensity, a.u. 0.2 0.1 0 -0.1 0.3 0.4 0.5 2 1 -1 0 -2 Time, ms Autocorrelation signal Gauss fit FMHM = 0.41 ms Autocorrelation signal (cycles) of CW mode-locked YVO 4 / Nd:YVO 4 laser pulses and Gaussian fitting (solid line)
๐ SIMILAR VOLUMES
A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
A passively mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser was realized with a low temperature (LT) In~0.25~Ga~0.75~As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continu
A laser-diode-pumped passively-Q-switched intracavity-frequency-doubled Nd:YVO~4~/YVO~4~ green laser with a MgO-PPLN and Cr^4+^:YAG is realized. The dependences of pulse width, pulse repetition rate on incident pump power at different small-signal transmissions of Cr^4+^:YAG are measured for the gre
We report an oblique incidence on semiconductor saturable absorber mirror (SESAM) method in the LD pumped passively mode-locked Nd:YVO~4~ picosecond laser in this article, making SESAM as the intracavity reflecting mirror, which produces maximum average output power of 1 W, pulse repetition rate of
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ฮผm with pulse repetition freque