𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Passivation of InP-based HBTs

✍ Scribed by Z. Jin; K. Uchida; S. Nozaki; W. Prost; F.-J. Tegude

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
382 KB
Volume
252
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Vektor for GaAs and InP based lasers, p-
Vektor for GaAs and InP based lasers, p-HEMTs and HBTs
πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 39 KB

Toshiba has purchased a Vektor X-ray diffraction tool from Accent Optical Technologies, a supplier of lattice engineering and photolithography process control tools. Toshiba will use the tool for DVD laser manufacturing at its Kitakyushu facility.

Study of surface passivation of InP
Study of surface passivation of InP
✍ Mircea Faur; Maria Faur; Phillip Jenkins; Manju Goradia; Sheila Bailey; Douglas πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 677 KB

## Abstract The effects of various surface preparation procedures, including chemical treatments in HF, HNO~3~, __o__‐H~3~PO~4~ and H~2~SO~4~ solutions and anodic oxidation, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of __n__^+^__p__

InP-based devices and their applications
InP-based devices and their applications for merged FET-HBT technologies
✍ P. Parikh; K. Kiziloglu; M. Mondry; P. Chavarkar; B. Keller; S. Denbaars; U. Mis πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 636 KB

that exists between the p + InGaAs and the 2DEG in the channel exhibits low leakage and a high breakdown voltage. More importantly, the gate-to-channel separation is determined solely by MBE growth, which leads to high threshold uniformity. Any problems of gate contact resistance are addressed by ve

A varactor-tuned MMIC VCO using InP-base
A varactor-tuned MMIC VCO using InP-based RTD/HBT technology
✍ Sunkyu Choi; Bangkeun Lee; Taeho Kim; Kyounghoon Yang πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 147 KB

In this paper, a 5-GHz fully integrated voltage-controlled oscillator (VCO) using an InP-based RTD/HBT technology is demonstrated for the first time. A figure of merit for the oscillator is obtained to be Οͺ180.8 dBc/Hz. In addition, the VCO has demonstrated a wide tuning range of 710 MHz at 5 GHz.