In this paper a Monte Carlo simulator which is focused on the modelling of abrupt heterojunction bipolar transistors (HBTs) is described. In addition, simulation results of an abrupt InP/InGaAs HBT are analysed in order to describe the behaviour of this kind of device, and are compared with experime
Numerical modelling of abrupt InP/InGaAs HBTs
✍ Scribed by Juan M. López-González; Lluis Prat
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 412 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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📜 SIMILAR VOLUMES
The high-speed characteristics of InP/InGaAs HBTs with two different collector structures have been investigated using an ensemble Monte Carlo particle simulator. It has been demonstrated that vertical scaling of a standard HBT structure does not result in a substantial improvement of overall speed
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