In this paper a Monte Carlo simulator which is focused on the modelling of abrupt heterojunction bipolar transistors (HBTs) is described. In addition, simulation results of an abrupt InP/InGaAs HBT are analysed in order to describe the behaviour of this kind of device, and are compared with experime
Monte Carlo analysis of ultrahigh-speed InP/InGaAs HBTs
β Scribed by G. Khrenov; E. Kulkova
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 669 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
The high-speed characteristics of InP/InGaAs HBTs with two different collector structures have been investigated using an ensemble Monte Carlo particle simulator. It has been demonstrated that vertical scaling of a standard HBT structure does not result in a substantial improvement of overall speed performance due to the increasing collector capacitance chargine time. As essential reduction of the collector transit delay time has been observed for HBT with nonuniform& doped (n--p+-n--n+) collector structure. The collector transit delay time is reduced due to the extension of the velociy overshoot @on in the collector. The parameters of HBT with proposed collector structure (n--p+-n--n+) have been optimized i n order to obtain the ultimate high-frequency performance under the high collector voltage.
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