InP-based devices and their applications for merged FET-HBT technologies
✍ Scribed by P. Parikh; K. Kiziloglu; M. Mondry; P. Chavarkar; B. Keller; S. Denbaars; U. Mishra
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 636 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
that exists between the p + InGaAs and the 2DEG in the channel exhibits low leakage and a high breakdown voltage. More importantly, the gate-to-channel separation is determined solely by MBE growth, which leads to high threshold uniformity. Any problems of gate contact resistance are addressed by very high acceptor doping. Recently high-perform a n e uniform (threshold uniformity gV,, = 13.7 mV) JHEMTs with unity gain cutoff frequency f, of 105 GHz and unity power gain cutoff frequency f , , of 220 GHz (the highest report for a junction barrier FET) have been demonstrated [4].