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Passivation of gallium arsenide by reactively sputtered gallium nitride thin films

โœ Scribed by A.B. Bhattacharyya; E. Lakshmi

Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
268 KB
Volume
14
Category
Article
ISSN
0026-2692

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โœ Bondar, V. ;Kucharsky, I. ;Simkiv, B. ;Akselrud, L. ;Davydov, V. ;Dubov, Yu. ;Po ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 131 KB ๐Ÿ‘ 2 views

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep