Attempts were made to passivate the GaAs 001 surface by a pseudomorphic ultra-thin cubic GaN layer formed by a ลฝ . ลฝ . nitrogen radical N-radical or nitrogen plasma irradiation technique. Reflection high-energy electron diffraction RHEED ลฝ . pattern observations and detailed X-ray photoelectron spec
โฆ LIBER โฆ
Passivation of GaAs surface by ultrathin epitaxial GaN layer
โ Scribed by J. Riikonen; J. Sormunen; H. Koskenvaara; M. Mattila; M. Sopanen; H. Lipsanen
- Book ID
- 108165943
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 298 KB
- Volume
- 272
- Category
- Article
- ISSN
- 0022-0248
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