✦ LIBER ✦

Passivation of dopants in InGaP using ECR hydrogenation

✍ Scribed by J.W. Lee; S.J. Pearton; C.R. Abernathy; W.S. Hobson; F. Ren

Book ID: 103955120
Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 454 KB
Volume: 38
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(95)01430-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface passivation of InGaP/GaAs HBT us

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR–CVD plasma

✍ L.T. Manera; L.B. Zoccal; J.A. Diniz; P.J. Tatsch; I. Doi 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 414 KB

Hydrogen passivation of dopants in amorp

Hydrogen passivation of dopants in amorphous silicon

✍ Stanislaw M. Pietruszko; Mariusz Pachocki; Jing Jang 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 338 KB

Photo-dissociation of hydrogen passivate

Photo-dissociation of hydrogen passivated dopants in gallium arsenide

✍ L Tong; J.A Larsson; M Nolan; M Murtagh; J.C Greer; M Barbe; F Bailly; J Chevall 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 169 KB

Characterization and modeling of three-t

Characterization and modeling of three-terminal heterojunction phototransistors using an InGaP layer for passivation

✍ Shih-Wei Tan; Hon-Rung Chen; Wei-Tien Chen; Meng-Kai Hsu; An-Hung Lin; Wen-Shiun 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 393 KB

Passivation of carbon doping in InGaAs d

Passivation of carbon doping in InGaAs during ECR-CVD of SiNx

✍ F Ren; R.A Hamm; J.R Lothian; R.G Wilson; S.J Pearton 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 222 KB

Passivation of dislocations in silicon b

Passivation of dislocations in silicon by hydrogenation

✍ I. Perichaud; H.El Ghitani; S. Martinuzzi 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 258 KB

We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AIGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and of deep traps in the cap and found the approximat