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Passivation of carbon doping in InGaAs during ECR-CVD of SiNx

โœ Scribed by F Ren; R.A Hamm; J.R Lothian; R.G Wilson; S.J Pearton

Book ID
103394053
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
222 KB
Volume
39
Category
Article
ISSN
0038-1101

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## This paper reports the deposition of hydrogenated silicon carbide ISiC:HI films using the electron cyclotron resonance chemical vapour deposition (EC!?-CVD) technique. Using this technique, SiC:H films were prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas.