✦ LIBER ✦

Partial epitaxial growth of NbSi2 on Si(111)

✍ Scribed by C.S. Chang; C.W. Nieh; J.J. Chu; L.J. Chen

Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 473 KB
Volume: 161
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(88)90258-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial growth of ErSi2 on (111) Si

✍ F.H. Kaatz; M.P. Siegal; W.R. Graham; J. van der Spiegel; J.J. Santiago 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 493 KB

Epitaxial growth of α-Fe films on CaF2(1

Epitaxial growth of α-Fe films on CaF2(111)Si(111) structures

✍ N. Mattoso; D.H. Mosca; W.H. Schreiner; I. Mazzaro; S.R. Teixeira 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 465 KB

RHEED studies of MnF2 epitaxial growth o

RHEED studies of MnF2 epitaxial growth on Si(111) substrates

✍ Yakovlev, N. L.; Banshchikov, A. G.; Moisseeva, M. M.; Sokolov, N. S.; Beeby, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 182 KB 👁 1 views

Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i

Partial epitaxial growth of Ni2Ge and Ni

Partial epitaxial growth of Ni2Ge and NiGe on Ge(111)

✍ Y.F. Hsieh; L.J. Chen; E.D. Marshall; S.S. Lau 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 426 KB

Epitaxial growth of 3CSiC on Si(111) fr

Epitaxial growth of 3CSiC on Si(111) from hexamethyldisilane

✍ C.H. Wu; C. Jacob; X.J. Ning; S. Nishino; P. Pirouz 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 935 KB

Type-B epitaxial growth of CeO2 thin fil

Type-B epitaxial growth of CeO2 thin film on Si(111) substrate

✍ Hirotoshi Nagata; Mamoru Yoshimoto; Hideomi Koinuma; Eungi Min; Nobuhiko Haga 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 270 KB