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Epitaxial growth of ErSi2 on (111) Si

✍ Scribed by F.H. Kaatz; M.P. Siegal; W.R. Graham; J. van der Spiegel; J.J. Santiago


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
493 KB
Volume
184
Category
Article
ISSN
0040-6090

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Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i