p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy
β Scribed by W.W. Liu; B. Yao; Y.F. Li; B.H. Li; Z.Z. Zhang; C.X. Shan; J.Y. Zhang; D.Z. Shen; X.W. Fan
- Book ID
- 116606959
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 325 KB
- Volume
- 504
- Category
- Article
- ISSN
- 0925-8388
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π SIMILAR VOLUMES
A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700
## Abstract Nβdoped pβtype ZnO thin films were grown by plasma molecular beam epitaxy (PβMBE) on __c__βplane sapphire (Al~2~O~3~) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (__N__~A~ β __N__~D~) of 1.2 Γ 10^18^ cm^β3^ a