P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

✍ Scribed by Liang, H. W. ;Lu, Y. M. ;Shen, D. Z. ;Liu, Y. C. ;Yan, J. F. ;Shan, C. X. ;Li, B. H. ;Zhang, Z. Z. ;Zhang, J. Y. ;Fan, X. W.

• Book ID: 105362970
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 123 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200420012

✦ Synopsis

Abstract

N‐doped p‐type ZnO thin films were grown by plasma molecular beam epitaxy (P‐MBE) on c‐plane sapphire (Al~2~O~3~) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (N~A~ – N~D~) of 1.2 × 10^18^ cm^–3^ and minimum resistivity of 9.36 Ω cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X‐ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p‐type ZnO thin films are dominated by the emission from donor–acceptor pair recombination. The formation mechanism of p‐type ZnO is explained by the optical emission spectra of radical N~2~ and radical NO. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)