Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon
β Scribed by Tanay, Florent; Dubois, Sebastien; Veirman, Jordi; Enjalbert, Nicolas; Stendera, Julie; Perichaud, Isabelle
- Book ID
- 121864926
- Publisher
- IEEE
- Year
- 2014
- Tongue
- English
- Weight
- 410 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0018-9383
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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygenβrelated donors are formed under compressive stress. The first one is the wellβkno
For (~ochralski-grown silicon, oxygen is the basic impurity, with its concentration exceeding IO Is cm-~. The complexing of oxygen upon heat treatment presents a long-standing challenge to our understanding of the physics of defects in silicon. In this paper the oxygen-related centres generated by l