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Oxidation of tantalum film on silicon

✍ Scribed by A.G. Revesz; J. Allison; T. Kirkendall; J. Reynolds

Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
218 KB
Volume
23
Category
Article
ISSN
0040-6090

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πŸ“œ SIMILAR VOLUMES

Transient behaviour of the anodic oxide
Transient behaviour of the anodic oxide film on tantalum
✍ M. Kato πŸ“‚ Article πŸ“… 1976 πŸ› Elsevier Science 🌐 English βš– 431 KB

## Ahstract -After heating the anodic oxide tilm on tantalum, a constant current or voltage was applied to the specimen in a diluted phosphoric acid solution. and the transient behaviour was examined according to the Frcnkel defect model. Interstitial ions taking part in ionic conduction are captu

The oxidation of tantalum-based thin fil
The oxidation of tantalum-based thin films
✍ V.P. Kolonits; M. Czermann; O. Geszti; M. MenyhΓ‘rd πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 534 KB
Anodic oxide films on silicon carbide
Anodic oxide films on silicon carbide
✍ S. K. Lilov πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 104 KB

## Abstract Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar