✦ LIBER ✦

Oxidation effects on the photoluminescent properties of Si nanocrystalline thin films

✍ Scribed by Kyung Ah Jeon; Jong Hoon Kim; Gun Hee Kim; Sang Yeol Lee

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 321 KB
Volume: 27
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2004.08.049

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Disorder Effects on the Gap of Thin Si N

Disorder Effects on the Gap of Thin Si Nanocrystalline Films

✍ S. Ménard; A. Saúl; F. Bassani; F. Arnaud d'Avitaya 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 169 KB 👁 2 views

The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o

Radiation effect on the photoluminescenc

Radiation effect on the photoluminescence properties of Si/SiO2 thin films

✍ Kun Zhong; Zhisong Xiao; Xiangqian Cheng; Fang Zhu; Lu Yan; Feng Zhang; Guoan Ch 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 390 KB

Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)

Effects of substrate temperature on micr

Effects of substrate temperature on microstructural and photoluminescent properties of nanocrystalline silicon carbide films

✍ Wei Yu; Xinzhan Wang; Wanbing Lu; Shufang Wang; Yalan Bian; Guangsheng Fu 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 410 KB

Nanocrystalline silicon carbide (nc-SiC) thin films have been grown on silicon (1 0 0) substrates by helicon wave plasma enhanced chemical vapor deposition technique and the photoluminescence of the films has been tuned from yellow to blue by changing the substrate temperatures (T s ). The resulting

Enhancing photoluminescence of nanocryst

Enhancing photoluminescence of nanocrystalline silicon thin film with oxygen plasma oxidation

✍ Chun-Yu Lin; Yean-Kuen Fang; Shih-Fang Chen; Shiuan-Ho Chang; Tse-Heng Chou 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 638 KB

The authors report the photoluminescence (PL) property of nanocrystalline silicon (nc-Si) enhanced by oxygen plasma oxidation technology. The oxidized nanocrystalline silicon thin films were investigated by PL, transmission electron microscope (TEM), micro-Raman scattering and X-ray diffraction (XRD

Roughness effect on photoluminescence of

Roughness effect on photoluminescence of cerium doped zinc oxide thin films

✍ M. El Jouad; M. Alaoui Lamrani; Z. Sofiani; M. Addou; T. El Habbani; N. Fellahi; 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Undoped and cerium doped zinc oxide thin films have been prepared by spray pyrolysis technique. The influence of Ce as doping agent on the optical and nonlinear optical properties was carefully investigated using transmission, X-ray diffraction, photoluminescence, atomic force microscopy (AFM), and

Photoluminescent properties of sol–gel d

Photoluminescent properties of sol–gel derived (La, Gd)MgB5O10:Ce3+/Tb3+ nanocrystalline thin films

✍ C.K. Lin; M. Yu; M.L. Pang; J. Lin 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 338 KB

Ce 3+ and/or Tb 3+ -doped (La, Gd)MgB 5 O 10 nanocrystalline thin films were deposited on silica glass substrates by a sol-gel dipcoating process using triethyl borate B(OC 2 H 5 ) 3 as the boron source. The results of XRD indicated that the films have fully crystallized after annealing at 800 °C. T