Photoluminescent properties of sol–gel derived (La, Gd)MgB5O10:Ce3+/Tb3+ nanocrystalline thin films

✍ Scribed by C.K. Lin; M. Yu; M.L. Pang; J. Lin

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 338 KB
• Volume: 28
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2005.04.009

✦ Synopsis

Ce 3+ and/or Tb 3+ -doped (La, Gd)MgB 5 O 10 nanocrystalline thin films were deposited on silica glass substrates by a sol-gel dipcoating process using triethyl borate B(OC 2 H 5 ) 3 as the boron source. The results of XRD indicated that the films have fully crystallized after annealing at 800 °C. The films are transparent, uniform and crack free with a thickness of about 300 nm, consisting of particles with an average grain size of 50 nm. The luminescence and energy transfer properties of Ce 3+ and Tb 3+ have been studied in the films. It is confirmed that the excitation energy of Ce 3+ transfers to the Gd 3+ , migrates over the Gd 3+ sublattices, trapped by the Tb 3+ and resulted in its characteristic green emission ( 5 D 4 -7 F 5 at 543 nm) in GdMgB 5 O 10 nanocrystalline films as in the powder phosphors.