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Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN

✍ Scribed by H. W. Jang; J. Lee

Book ID: 124078208
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 561 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3133873

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## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 × 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele