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Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

✍ Scribed by Luther, B. P.; Mohney, S. E.; Jackson, T. N.; Asif Khan, M.; Chen, Q.; Yang, J. W.

Book ID: 120043588
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 373 KB
Volume: 70
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.119305

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