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Origin of 1/f3/2noise in GaAs thin-film resistors and MESFET's

✍ Scribed by Pouysegur, M.; Graffeuil, J.; Cazaux, J.-L.


Book ID
114596103
Publisher
IEEE
Year
1987
Tongue
English
Weight
733 KB
Volume
34
Category
Article
ISSN
0018-9383

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Generation of 1/f spectrum by relaxation
✍ Sumihisa Hashiguchi; Yutaka Yamagishi; Toshiyuki Fukuda; Makoto Ohki; Josef Ε iku πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 60 KB πŸ‘ 2 views

Relaxation processes with various time constants generate a 1/ f spectrum when they are driven by a single random time series. Such simple processes may be the origin of the noise generated in some kinds of thin film resistors.