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Organometallic molecular precursors for low-temperature MOCVD of III–V semiconductors

✍ Scribed by Dr. Francis Maury


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
506 KB
Volume
3
Category
Article
ISSN
0935-9648

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Static Vapor Pressure Measurement of Low
✍ T. Ohta; F. Cicoira; P. Doppelt; L. Beitone; P. Hoffmann 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 347 KB 👁 1 views

Static vapor pressure measurements of volatile metal precursors, in the pressure range 10 ±1 Pa to 10 3 Pa, are described. The vapor pressures and the sublimation or evaporation enthalpies, in the range 265 K±300 K, of Mo(CO) 6 (77.7 kJ mol ±1 ), two dimethyl(b-diketonato)gold(III) complexes, Me 2 A