## Abstract The influences of the preparation conditions on the properties of anodic aluminium oxide films were studied by electrochemical impedance spectroscopy. A twoβlayer model of the film, consisting of barrier and porous layers was used to analyze the impedance data. The thickness of the barr
Organic Electronics || Aluminium Oxide Film as Gate Dielectric for Organic FETs: Anodisation and Characterisation
β Scribed by Wll, Christof
- Book ID
- 120394371
- Publisher
- Wiley-VCH Verlag GmbH & Co. KGaA
- Year
- 2009
- Tongue
- German
- Weight
- 383 KB
- Edition
- 1
- Category
- Article
- ISBN
- 352740810X
No coin nor oath required. For personal study only.
β¦ Synopsis
Organic molecules are currently being investigated with regard to their application as active components in semiconductor devices. Whereas devices containing organic molecules for the generation of light - organic light emitting diodes (OLED) - have already reached the market (they e.g. display information on mobile phones), transistors where organic molecules are used to actively control currents and voltages are still in the development stage.
In this book the principle problems related to using organic materials as semiconductors and to construct functioning devices will be addressed.
A particular emphasis will be put on the difference between inorganic semiconductors such as Si, Ge and GaAs and organic semiconductors (OSC). The special properties of such soft matter require particular approaches for processing characterization and device implementation, which are quite different from the approach used for conventional semiconductors.
π SIMILAR VOLUMES
In this study, we present a low voltage pentacene organic thin film transistor (OTFT) with poly(styrene-co-methyl methacrylate) grafted hafnium oxide (PS-r-PMMA/HfO x ) as gate dielectrics. The HfO x was sputtered at room temperature to approach low temperature and meet low cost requirements of orga