Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

✍ Scribed by G. Lucovsky; J.C. Phillips

• Book ID: 116669613
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 637 KB
• Volume: 352
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/j.jnoncrysol.2006.03.123