Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)

✍ Scribed by G. Lucovsky; J.C. Phillips

• Book ID: 116669074
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 297 KB
• Volume: 352
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/j.jnoncrysol.2005.11.130