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Aluminum oxide film as gate dielectric for organic FETs: Anodization and characterization

✍ Scribed by Dang, X.-D. ;Plieth, W. ;Richter, S. ;Plötner, M. ;Fischer, W.-J.

Book ID
105364527
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
782 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The influences of the preparation conditions on the properties of anodic aluminium oxide films were studied by electrochemical impedance spectroscopy. A two‐layer model of the film, consisting of barrier and porous layers was used to analyze the impedance data. The thickness of the barrier layer was calculated from the capacitance values. The total thickness of the aluminium oxide film was determined by cross‐section SEM micrographs. Thus, anodic aluminium oxide films were prepared showing dielectric properties comparable to that of silicon dioxide films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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