Optimization of the polycrystalline silicon-on-silicon dioxide characterization using spectroscopic ellipsometry
โ Scribed by L.M. Asinovsky
- Book ID
- 107864174
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 323 KB
- Volume
- 233
- Category
- Article
- ISSN
- 0040-6090
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The wide applicability of spectroscopic ellipsometry (S/z) to characterize non-destructively silicon-on-insulator materials is illustrated with a number of case studies. SE allows the determination of not only the optical properties of single layers as a fimction of the wavelength but also their thi
## Abstract Samples of polycrystalline silicon (polyโSi) thinโfilm multilayers were prepared by lowโpressure chemical vapor deposition. Analysis of these samples by crossโsectional transmission electron microscopy (XTEM) revealed large changes in grain size between the undopedโasโdeposited and dope