A growth mechanism diagnosis for high-rate, polycrystalline silicon deposition using hot-wire CVD is explored in this article. The effects of various deposition parameters on the Si film growth are investigated by Raman spectroscopy and transmission electron microscopy (TEM) measurements, with speci
โฆ LIBER โฆ
Spectroscopic and kinetic ellipsometry studies of hot-wire deposited polycrystalline silicon on glass
โ Scribed by P.A.T.T. van Veenendaal; Gerard W.M. van der Mark; J.K. Rath; R.E.I. Schropp
- Book ID
- 108388629
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 252 KB
- Volume
- 430
- Category
- Article
- ISSN
- 0040-6090
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The eect of dierent post-deposition treatments on the structure of Hot-Wire (HW) deposited intrinsic a-Si:H thin ยฎlms is investigated. These treatments are applied in order to rehydrogenate the top region of the ยฎlm, which, due to the high deposition temperatures of these ยฎlms, becomes depleted of h