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Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

✍ Scribed by M. Fonrodona; D. Soler; J. Escarré; F. Villar; J. Bertomeu; J. Andreu; A. Saboundji; N. Coulon; T. Mohammed-Brahim


Book ID
108288970
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
115 KB
Volume
501
Category
Article
ISSN
0040-6090

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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not