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Optimization of SiGe HBTs for operation at high current densities

✍ Scribed by Joseph, A.J.; Cressler, J.D.; Richey, D.M.; Niu, G.


Book ID
114537769
Publisher
IEEE
Year
1999
Tongue
English
Weight
201 KB
Volume
46
Category
Article
ISSN
0018-9383

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We investigated the reliability of InP-based HBTs with a ledge structure, focusing on emitter-metal-diffusion-induced degradation. Bias-temperature accelerated tests under high temperatures and high current densities of up to 5 mA/lm 2 were conducted for HBTs with conventional emitter electrodes, wh