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Linearity and power characteristics of SiGe HBTs at high temperatures for RF applications

✍ Scribed by Kun-Ming Chen; An-Sam Peng; Guo-Wei Huang; Han-Yu Chen; Sheng-Yi Huang; Chun-Yen Chang; Hua-Chou Tseng; Tsun-Lai Hsu; Liang, V.


Book ID
114617864
Publisher
IEEE
Year
2005
Tongue
English
Weight
502 KB
Volume
52
Category
Article
ISSN
0018-9383

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RF performance assessment of AlGaN/GaN M
✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 451 KB

## Abstract An investigation of temperature model for an AlGaN/GaN MISHFET is presented and a relative comparison is done with conventional HFET structures. The proposed analytical model demonstrates its inherent ability to operate at higher temperature. The contributions from various temperature d