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Applications and processing of SiGe and SiGe:C for high-speed HBT devices

✍ Scribed by D.J. Meyer; D.A. Webb; M.G. Ward; J.D. Sellar; P.Y. Zeng; J. Robinson

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 169 KB
Volume: 4
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(02)00012-4

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## Abstract This paper demonstrates the divide‐by‐4/5 prescalers with merged AND gates in 2‐μm GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35‐μm SiGe HBT technologies. By biasing the HBT near the peak transit‐time frequency (f~T~), the maximum operating frequency of a D‐type flip‐flop