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Optimization of long wavelength InGaAsP strained quantum-well lasers

✍ Scribed by Silver, M.; O'Reilly, E.P.

Book ID
117868057
Publisher
IEEE
Year
1995
Tongue
English
Weight
855 KB
Volume
31
Category
Article
ISSN
0018-9197

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Long-wavelength strained-layer InGaAs/Ga
Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri