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Comment on “Theory and Experiment of and Long-Wavelength-Strained Quantum-Well Lasers”

✍ Scribed by Yean-Sheng Yong; Hin-Yong Wong; Ho-Kwang Yow

Book ID
114565629
Publisher
IEEE
Year
2009
Tongue
English
Weight
63 KB
Volume
45
Category
Article
ISSN
0018-9197

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri