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Carrier transport mechanisms in high-power InGaAs-InGaAsP-InGaP strained quantum-well lasers

✍ Scribed by Ispasoiu, R.G.; Fox, A.M.; Botez, D.


Book ID
117869629
Publisher
IEEE
Year
2000
Tongue
English
Weight
93 KB
Volume
36
Category
Article
ISSN
0018-9197

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Calculations of the femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers are presented and compared to experiments which use a novel multiple-wavelength pump probe technique. We develop a detailed theoretical model for the gain dynamics in a quantum well laser d