## Abstract A Q‐band low‐noise amplifier (LNA) suitable for low‐voltage operation is presented in this paper.The amplifier uses a low‐voltage cascode structure in the first stage of the amplifier and was fabricated using a 0.13‐μm RF CMOS process with eight layers of copper metallization. Low‐volta
Optimization of cascode configuration in CMOS low-noise amplifier
✍ Scribed by Ickhyun Song; Minsuk Koo; Hakchul Jung; Hee-Sauk Jhon; Hyungcheol Shin
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 297 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
In this paper, design consideration of the cascode configuration in low‐noise amplifiers (LNA) using 0.13‐μm CMOS technology is presented. Performance factors of LNAs such as signal power gain, noise factor, and power consumption are analytically expressed in device parameters from its small‐signal equivalent circuit. The effect of the common‐gate transistor in each performance factor is evaluated at the target frequency of 17‐GHz ISM band. At this frequency, power gain and noise factor are degraded, which result from the common‐gate transistor. Figure of merit of LNAs is also optimized. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 646–649, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23163
📜 SIMILAR VOLUMES
## Abstract In this article, a 5.8 GHz ISM‐band CMOS low noise amplifier (LNA) operating in a subthreshold region is presented. A conventional source degeneration inductor is eliminated for higher signal gain while providing reasonable input impedance. The LNA is fabricated using 130 nm CMOS techno
A 0.18-lm CMOS low-noise amplifier (LNA) operating over the entire ultrawideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 6 2.5 dB, minimum input matching of À8 dB, noise figure from 3.9 to 6.3 dB, and IIP3
## Abstract In this letter, we proposed a low power, high gain, compact ultra‐wideband (UWB) low noise amplifier (LNA) using TSMC 0.18‐μm CMOS technology.To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilize
## Abstract A three‐stage low‐noise amplifier (LNA) fabricated in a standard 0.18‐μm CMOS process (__f__~__T__~ = 45 GHz) with a maximum gain of 18 dB at 23.2 GHz and a 5.8‐dB noise figure is presented. Parallel feedback between the gate and drain is used in all three stages. This configuration als