𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optimization of breakdown voltage in DMOS structures: K. Grahn (Semicond. Lab., Tech. Res. Centre of Finland, Espoo, Finland) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 107-10


Book ID
108361455
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
92 KB
Volume
18
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


An interactive simulation program for ME
📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 92 KB

4 SPICE MOS level 3 is shown to give a good current fit with measured NMOS and PMOS transistor curves. Mean squares of relative current errors (A/RMS) around 2% are achievable using extracted circuit parameters at VBs = 0 V. However, relative conductance errors (AGe~ls) become large if only the curr

CAD studies of MESFET devices with a mod
📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 92 KB

SPICE MOS level 3 is shown to give a good current fit with measured NMOS and PMOS transistor curves. Mean squares of relative current errors (A/RMS) around 2% are achievable using extracted circuit parameters at VBs = 0 V. However, relative conductance errors (AGe~ls) become large if only the curren