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An interactive simulation program for MESFET and TEGFET structures: U. Westergren (Inst. of Microwave Technol., Stockholm, Sweden) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 215-18

Book ID
104157550
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
92 KB
Volume
18
Category
Article
ISSN
0026-2692

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✦ Synopsis

4 SPICE MOS level 3 is shown to give a good current fit with measured NMOS and PMOS transistor curves. Mean squares of relative current errors (A/RMS) around 2% are achievable using extracted circuit parameters at VBs = 0 V. However, relative conductance errors (AGe~ls) become large if only the current error is minimised. To overcome this problem the authors have developed an advanced curve fitting program ESTIM that weighs the conductance error, too. Typical errors

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SPICE MOS level 3 is shown to give a good current fit with measured NMOS and PMOS transistor curves. Mean squares of relative current errors (A/RMS) around 2% are achievable using extracted circuit parameters at VBs = 0 V. However, relative conductance errors (AGe~ls) become large if only the curren