A portable analytical GaAs MESFET simulation model including temperature and negative differential mobility effects: M. Ansersson (Semicond. Lab., Tech. Res. Centre of Finland, Espoo, Finland) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway, 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 203-6

• Book ID: 108361456
• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 92 KB
• Volume: 18
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(87)80394-4