✦ LIBER ✦
CAD studies of MESFET devices with a modified BAMBI: F. Masszi, K. Bohlin, J. Nylander, P.A. Tove (Dept. of Technol., Uppsala Univ., Sweden) 12th Nordic Semiconductor Meeting. Proceedings, Jevnaker, Norway 8–11 June 1986 (Oslo, Norway: Center Ind. Res. 1986) pp. 100-2
- Book ID
- 104157548
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 92 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0026-2692
No coin nor oath required. For personal study only.
✦ Synopsis
SPICE MOS level 3 is shown to give a good current fit with measured NMOS and PMOS transistor curves. Mean squares of relative current errors (A/RMS) around 2% are achievable using extracted circuit parameters at VBs = 0 V. However, relative conductance errors (AGe~ls) become large if only the current error is minimised. To overcome this problem the authors have developed an advanced curve fitting program ESTIM that weighs the conductance error, too. Typical errors