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Optically monitoring and controlling epitaxial growth

✍ Scribed by D.E. Aspnes; R. Bhat; C. Caneau; E. Colas; L.T. Florez; S. Gregory; J.P. Harbison; I. Kamiya; D.E. Aspnes; R. Bhat; C. Caneau; E. Colas; L.T. Florez; S. Gregory; J.P. Harbison; I. Kamiya; V.G. Keramidas; M.A. Koza; M.A.A. Pudensi; W.E. Quinn; S.A. Schwarz; M.C. Tamargo; H. Tanaka


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
597 KB
Volume
120
Category
Article
ISSN
0022-0248

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## Abstract We have grown zincblende‐structured ZnTeO alloy semiconductors on GaAs substrates by molecular beam epitaxy using RF‐excited O. O concentrations measured by secondary ion mass spectroscopy were found to increase with the increase of O~2~ flow rate supplied during the growth, while the c